Abstract
Properties of silicon nitride films formed by the HCD (Hollow Cathode Discharge) ion plating process were studied. Defect density of films as a function of film thickness was also measured. Silicon was evaporated in nitrogen gas atmosphere with the HCD plasma electron beam and deposited on p-type (100) oriented silicon substrates. It was found that with increasing nitrogen partial pressure the electrical resistivity, the relative dielectric constant and the hardness of films increased, and that the infrared absorption peak wavelength and the refractive index of films decreased.
The HCD ion plating process made it possible to form silicon nitride films at a low substrate temperature (473 K) and a high deposition rate (10 nm/s), and the properties of films deposited were comparable to those formed by the CVD or plasma CVD processes.
