1985 Volume 49 Issue 4 Pages 243-247
A single crystal of HgTe was grown by the Bridgman method and annealed in Hg or Te vapour. The Hall coefficient and the electrical conductivity were measured on the annealed crystals in the temperature range between 77 K and room temperature. The electrical conductivity increased with annealing partial pressure. The p-n turning temperature of the sign of the Hall coefficient. RH of Hg-annealed crystal fell with increasing Hg partial pressure, while that of Te-annealed crystal rose. The carrier concentration was calculated from the Hall coefficient RH in the temperature range of exhausion near 77 K by a single carrier model. The Hg partial pressure of p-n transition was obtained from the dependence of carrier concentration upon the Hg partial pressure. The i-boundary corresponding p-n transition and lines of equivalent carrier concentration were drawn on the P-T phase diagram for the Hg-Te system.
