Journal of the Japan Institute of Metals and Materials
Online ISSN : 1880-6880
Print ISSN : 0021-4876
ISSN-L : 0021-4876
Influence of Production Process on Film Characteristics of Silicon Nitride
Fumiyoshi KirinoAkiko MutouNorio Ohta
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1991 Volume 55 Issue 6 Pages 706-714

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Abstract
SiNx films are widely used as protection and Kerr enhancement films for magneto-optical disks. The characteristics of the SiNx films, produced by reaction sputtering using the silicon target, are studied by FT-IR, Auger electron spectroscopy, a microscope, an X-ray diffraction meter, and the ESCA method. The film, produced by a pass-by type sputtering apparatus, a low sputtering gas pressure, and a short length between target and substrate, does not contain oxygen. The reaction sputtering method gives little influence on the sputtering condition. Oxygen is not contained in the film using this production condition. The magneto-optical recording film is corroded, if the SiNx film containing oxygen is used as a Kerr enhancement and protection film. Nitrogen possesses one bonding order, as a independent of production process, and silicon, depended on the process, possesses some state. The surface of this films is flat and amorphous. The magneto-optical disk using this SiNx films has no problems such as the increase δ the noise level.
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