Journal of the Japan Institute of Metals and Materials
Online ISSN : 1880-6880
Print ISSN : 0021-4876
ISSN-L : 0021-4876
High Resolution Electron Microscopy of Al/Si and Al/Si3N4 Interfaces Prepared by Room Temperature Bonding Method
Hideki Takagi, Yutaka Takahashi, Tadatomo Suga, Yoshio Bando
Author information
Keywords: surface activation method, aluminium/silicon, aluminium/silicon nitride, aluminiun/aluminium, argon beam bombardment, surface damage, high resolution electron microscopy
JOURNAL FREE ACCESS

1991 Volume 55 Issue 8 Pages 907-908

Details
Download PDF (253K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Article 1st page
Content from these authors
© The Japan Institute of Metals
Previous article
Favorites & Alerts

Recently viewed articles
Predecessor

Journal of the Japan Institute of Metals

The Journal of the Japan Institute of Metals.A

The Journal of the Japan Institute of Metals.B

Share this page
feedback
 Top