Journal of the Japan Institute of Metals and Materials
Online ISSN : 1880-6880
Print ISSN : 0021-4876
ISSN-L : 0021-4876
Formation of Al2O3 Films by Low Pressure CVD Using ATI-O2 Sytem and Evaluation of Corrosion Resistances of the Films
Tetsu GoKatsuhisa Sugimoto
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1992 Volume 56 Issue 2 Pages 184-190

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Abstract

In order to obtain high corrosion-resistant oxide filmes, Al2O3 films were formed on the Pt substrate by low pressure CVD technique using aluminum-tri-isopropoxide (ATI, Al(OC3H7)3) and oxygen. The changes in the composition, structure, and corrosion resistance of the films were investigated as functions of deposition and heat-treatment temperatures. The structure of the films was amorphous at deposition temperatures in the range of 473-773K. The refractive index of the films increased with increasing deposition temperature, showing the increase in density of the films. The corrosion resistance of the films in 1.0 and 12.0 kmol·m−3 HCl and 0.01 kmol·m−3 NaOH solutions increased with increasing deposition temperature. Films deposited at 623 K were transformed into γ-Al2O3 and α-Al2O3 by annealing at 1073 K and 1173 K, respectively. The crystallized films hardly dissolved in a 12.0 kmol·m−3 HCl solution.

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