Abstract
By using a new quantitative recording material, the imaging plate, electron diffraction patterns were measured quantitatively. In order to evaluate quantitatively the intensity of weak scattering in electron diffraction patterns, a background fitting method was developed and applied to electron diffraction patterns of Ga0.5In0.5P and polyethylene. The background fitting method was successfully carried out with a quadratic function in both cases. It was found that the intensity distribution of diffuse scattering peaks of Ga0.5In0.5P had an asymmetrical shape with higher intensities at larger scattering angle, indicating the existence of static displacement of atoms. Also, in the electron diffraction pattern of polyethylene, decrease of 200 diffraction intensity due to the 200 keV and 100 keV electron irradiation was quantitatively evaluated.
