Abstract
Silicon precipitation reaction was conducted on non-crystalline quartz glass substrate from the hydrogen reduction of Si2Cl6 at temperatures from 873∼1273 K using a horizontal cold wall reactor. The precipitation rate was measured under various experimental conditions and precipitation morphology was observed by X-ray diffraction analysis and SEM. The precipitation rate is one order of magnitude larger than those of other silicon source gases. In the condition when the reaction is controlled by a surface reaction (873∼1073 K), the rate dependence on Si2Cl6 and H2 are proportional to 1/2 order of the former and to the first order of the latter, respectively. From XRD and SEM results, Si precipitated at 1073 K has a preferred crystal orientation in the ⟨110⟩ direction.
