Thermoelectric Properties of FeSi₂-Base Semiconductors with Ag Addition

Abstract

The objective of this paper is to fabricate a thermoelectric semiconductor with high-generating power. After powders were prepared from the melt-spun ribbons of FeSi₂-1 at%M (M=B, Mn, Co) which were made by a single roll method, they were sintered with Ag-powder or AgNO₃-solution. When the powders of FeSi₂-1 at%Co were sintered with AgNO₃-solution, the large power factor is obtained due to the reduced electrical resistivity.