Characteristics of Silicon Carbide Schottky Barrier Diodes and Confirmation of Power Loss Reduction Effects

Abstract

Silicon carbide Schottky barrier diode (SiC-SBD) is expected to be a candidate instead of silicon fast recovery diode (Si-FRD) over 600V. We compare some electrical characteristics of conventional Si-FRDs with those of our SiC-SBD samples. We also prepare three types of SiC modules. One is hybrid IGBT module consisting of Si-IGBT and SiC-SBD, another is SiC-SBD module and the other is hybrid intelligent power module (IPM) with Si-IGBT and SiC-SBD. In addition, we confirm the power loss reduction effect of 10kWsolar power conditioner and 8kW 3-phase PFC converter by using each module.