抄録
Recently, silicon carbide (SiC) single crystal in the diameter of 3 inches have been developed and micropipes have been reduced to 3/cm2 using the vaccum sublimation method. SiC JFET, MESFET and other devices operable at higher temperatures and higher power more than silicon devices have been realized in the research stage.
We report a feature of silicon cabide, the present state of device fabrication techniques and silicon carbide devices.
