Abstract
Single crystals of some II_b-Vl_b binary compounds were grown by the sublimation method under an independently-controlled partial pressure of one of the constituent elements. By making clear the vaportransport mechanism as a function of transport parameters, the growth conditions effective for controlling the deviation from stoichiometry of the grown crystals was clarified. Simultaneous control of the composition x and the deviation y from stoichiometry for II_b-Vl_b ternary solid solutions such as Zn_<1+y> (S_xSe_<1-x>) and Cd_<1+y> (S_xSe_<1-x>) was attempted through the sublimation growth and the effectiveness of the new method was confirmed from electrical properties of the grown crystals.
