Abstract
Dislocations in LEC-grown, semi-insulating GaAs are not only contibutable to variations of material parameters, but tonon-uniformity of FET performances. The paper highlights current understandings in relationship between dislocations and FET threshold voltage, and then discusses a close correlation between dislocations, native defects AsGa antisites and threshold voltage by means of defect reaction equilibrium around dislocations. Finally, a local segregation of point defects (local inhomogeneities) around dislocations is presented so as to explain overall the effects of point defects on device properties
