LEC GaAs結晶中の局所歪み : II. LEC GaAgにおける偏析現象
1986 年 13 巻 2-3 号 p. 159-165
詳細
1986 年 13 巻 2-3 号 p. 159-165
Strain distribution in (001) LEC-grown GaAs wafers was investigated mainly by means of X-ray reflection topography. Local strain fields were observed around <100> radii with fourfold symmetry for high dislocation density wafers and between <100> and <110> radii with eight-fold symmetry for low dislocation density wafers. The latter can be explained by taking Schmid factor destribution under a tangential stress being exerted along water periphery into account. Major dislocations contributing to the strain distnbution and dislocatron multiplication are thought to be screw ones.
