抄録
An application of laser Raman spectroscopy to estimate the clustering parameters and internal stress accumulated in each bond in Ga_0.5Al_0.5As, Gao_0.52In_0.48P, Ga_<1-χ>In_χAs (0≦χ≦0.53), and GaAs_0.7P_0.3 is proposed. The clustering parameters and stress are evaluated from the phonon intensity and the difference between the observed optical phonon frequencies and those calculated in terms of the modified REI model respectively. The estimated values of the clustering parameter agree fairly well with those obtained from theoretical calculation of the excess free energy of mixing. The bond lengths in Ga<1-χ>In_χAs (0≦χ≦0.53) are derived from the stress, and are compared with published data on extended X-ray absorption fine structure.
