抄録
Selective growth of AlGaAs system in III-V compounds with various epitaxial growth methods has been briefy described on the morphologies in the grown layers. Selective area growth of GaAs and AlGaAs on patterned GaAs sustrates with low-pressure organometallic vapor phase epitaxy is reviewed in detall. The GaAs-AlGaAs double heterostructure grown in etched grooves of a semi-sin-sulating GaAs substrate has been used for the fabrication of TJS lasers, whose characteristics have showed the excellent quality of the embedded layers . The crystallographic orientation dependence of growth rates are also described and the growth mechanism discussed.
