Abstract
The crystallographic relationship of hetero-epitaxial films of zinc oxide to sapphire was investigated for a vapor phase growih system. Zinc oxide layers were deposited on (0001), (1120), (1102), (1014) and spherical substrates of α-Al_2O_3 single crystal by a chemical transport reaction ZnO and H_2. Characterization of these layers by Laue back diffraction, microscopy and laser light figures revealed multrple mode heteroeprtaxy. A number of types of epitaxial relationship are summarized finally into six modes. The prevalence of these epitaxial modes was interpreted in terms of two kinds of index, the standard deviation of displacement and the atomic density ratio both of which are based on the correspondence of atomic sites of Zn and Al in the layer grown and the substrate, respectively.
