-
Article type: Cover
1989 Volume 15 Issue 3-4 Pages
Cover1-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Article type: Appendix
1989 Volume 15 Issue 3-4 Pages
App1-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Article type: Index
1989 Volume 15 Issue 3-4 Pages
Toc1-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Article type: Index
1989 Volume 15 Issue 3-4 Pages
Toc2-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Masanobu Kasuga
Article type: Article
1989 Volume 15 Issue 3-4 Pages
261-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Yoshiyasu Arima, Toshiharu Irisawa
Article type: Article
1989 Volume 15 Issue 3-4 Pages
262-270
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
On growth of singular surface of crystal, the surface diffusion process plays an important role. The back-force effect is a reduction of the localized driving force due to the presence of the steps as sinks for the growth units on the surface. Introducing it into the BCF's spiral growth theory, the expansion of the interstep distance is caused and therefore the growth rate is reduced. In nucleation growth process, it causes significant reduction of the two-dimensional nucleation rate on the surface. Moreover, on already existing nucleus, the critical size of nucleus is greater than one derived from conventional nucleation theory. It may be called the effective critical radius. On the perfect surface, two-dimensional nucleation occurs here and there and may occur also on growing nucleus.
View full abstract
-
Makio Uwaha
Article type: Article
1989 Volume 15 Issue 3-4 Pages
271-279
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
Interaction of steps determines step distribution of a crystal in growth (melting) as well as in equilibrium. Thereby it controls the growth law and the crystal shape. Among various kinds of step interactions, the molecular potential of the rigid lattice, the elastic interaction and the interaction due to statistical fluctuation of steps are common and believed to be important. They depend on the step distance d as 〜d^<n+3> (n: power of the molecular potential), 〜d^<-2> and 〜d^<-2>, respecuvely. In a quantum system, a step is viewed as an oscillating string accompanied by superfluid flow. When there are many parallel steps, the oscillation spectrum is modified by the interference of the flow, and as a result the zero-point energy increases, leading to a 〜d^<-2> repulsion of steps.
View full abstract
-
Noriko Akutus, Yasuhiro Akutsu
Article type: Article
1989 Volume 15 Issue 3-4 Pages
280-287
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
Fluctuation properties of anisotropic one-dimensional interfaces, whose typical example are the steps on a crystal surface, are discussed from a statistical-mechanical point of view. For global fluctuations, general relationship between the scaled global interface width, the interface stiffness and the curvature of the equilibrium shape is established. For local fluctuations, the intrinsic interface structure is studied by Monte-Carlo method. Based on the detailed temperature dependence and the system size dependence, critical behavior of the intrinsic structure is discussed.
View full abstract
-
Kumiko Hara, Kiyoyuki Terakura
Article type: Article
1989 Volume 15 Issue 3-4 Pages
288-297
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
Recent works on the molecular-dynamics simulations for the molecular-beam epitaxy (MBE) for the Lennard-Jones and silicon systems are reviewed. The information about the dynamics of the MBE process in the atomistic scale is very hard to obtain by experiments and therefore the molecular-dynamics simulation plays a crucial role in this regard. As for the Lennard-Jones systems, discussions are made on the dependences of the MBE growth pattern on the crystal face of the substrate surface, the substrate temperature and the size mismatch between the incident and substrate atoms. In particular, it is demonstrated that the growth pattern changes systematically as the size mismatch changes. In contrast to these successful model calculations, a realistic simulation for Si has some unsolved problems.
View full abstract
-
Tadashi Ohachi
Article type: Article
1989 Volume 15 Issue 3-4 Pages
298-310
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
Recent analytical methods to determine the equilibrium form of crystals are reviewed. Yamada's contribution for a terrace ledge kink (TLK) model is presented. The step density on a vicinal face, which is introduced by him, is related to the orientation |p| of the surface. The concept of the projected surface free energy density β is also introduced by Yamada. Step energy and interaction between steps are considered to the calculation of the projected surface free energy density. Andreev's Legendre-transformed surface free energy density gives the shape of equilibrium form. Garcia, Saenz and Cabrera racognized the idea of Legendre transformation independently. Cabrera's expansion of β by |p| is used to determine the equilibrium form of α-Ag_2S by using the Legendre transformation of crystal shape.
View full abstract
-
Takehiko Gonda, Tadanori Sei
Article type: Article
1989 Volume 15 Issue 3-4 Pages
311-321
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
The growth mechanism of ice crystals growing at low air pressure is experimentally studied and the mechanism of the habit change with temperature of ice crystals is discussed. By repeating the growth and the evaporation of the same ice crystal at a constant temperature, the normal growth rates of the {1010} an {0001} faces of the ice crystal versus supersaturation are measured and compared with the various growth theories. The surface structure of an ice crystal growing or evaporating at a constant temperature is studied in situ. It is found from the present experiments that at a temperature of 0 to -2℃, the {1010} and {0001} faces of ice crystals growing at low air pressure grow by the V-QL-S mechanism, while at a temperature of -2 to -30℃, they grow by the BCF mechanism.
View full abstract
-
Kunio Takayanagi, Yasumasa Tanishiro, Hirokazu Akiyama
Article type: Article
1989 Volume 15 Issue 3-4 Pages
322-326
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
Growths of Au cluster and Au surface seen at atomic level by high resolution UHV electron microscopy are briefly summarized. Au clusters consisting of several atoms are directly seen during growth on a graphitized carbon and they show rapid structure change even at room temperature. On a stepped (110) surface, bilayer step growth is seen, which is closely related with the stability of the (110) surface having the 2 x 1 missing-row reconstructed structure.
View full abstract
-
Masanobu Kasuga, Makoto Iuchi
Article type: Article
1989 Volume 15 Issue 3-4 Pages
327-333
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
The crystallographic relationship of hetero-epitaxial films of zinc oxide to sapphire was investigated for a vapor phase growih system. Zinc oxide layers were deposited on (0001), (1120), (1102), (1014) and spherical substrates of α-Al_2O_3 single crystal by a chemical transport reaction ZnO and H_2. Characterization of these layers by Laue back diffraction, microscopy and laser light figures revealed multrple mode heteroeprtaxy. A number of types of epitaxial relationship are summarized finally into six modes. The prevalence of these epitaxial modes was interpreted in terms of two kinds of index, the standard deviation of displacement and the atomic density ratio both of which are based on the correspondence of atomic sites of Zn and Al in the layer grown and the substrate, respectively.
View full abstract
-
Kazumasa Hiramatsu, Hiroshi Amano, Norikatsu Koide, Isamu Akasaki
Article type: Article
1989 Volume 15 Issue 3-4 Pages
334-342
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
High quality GaN film with a smooth surface free from hillocks , pits and cracks can be grown epitaxially on a sap-phire substrate by metalorganic vapor phase epitaxy (MOVPE) usingd a thin AlN buffer layer. The initial growth stage of GaN film with and without the buffer layer is studied in detail. It is found that the most essential role of the buffer layer is ( I ) supply of the nucleation centers with the same crystal orientation as the substrate and (2) promotion of the lateral growth of GaN due to the decrease in an interfacial free energy between the substrate and the GaN film.
View full abstract
-
Toshiaki Osaka, Yoshitaka Kasukabe, Tohru Kunishi, Masahito Satoh, Kaz ...
Article type: Article
1989 Volume 15 Issue 3-4 Pages
343-354
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
Thin films of tin were prepared by vacuum depositon on UHV-cleaved NaCl, KCl and KBr substrates at room temperature. Particles of tin grew graphoepitaxially on the steps of these substrates, whereas they grew epitaxially on the flat areas of the KCl and KBr substrates and oriented almost randomly on the flat area of the NaCl substrate. Monatomic spiral steps were prepared by ultrahigh vacuum sublimation of these substrates cleaved in ultrahigh vacuum. The results obtained from the particles of tin and indium deposited onto the respective spiral steps are as follows: The particles of tin were epitaxially grown on the monatomic steps of the KCl and KBr substrates, whereas the particles on the NaCl substrate were graphoepitaxially grown on a monatomic step. On the other hand, the particles of indium grew graphoepitaxially on the monatomic steps of all the substrates, though on the flat areas of the KCl and KBr substrates the particles grew in a random state and they grew epitaxially on the flat area of the NaCl substrate.
View full abstract
-
Article type: Bibliography
1989 Volume 15 Issue 3-4 Pages
355-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Article type: Bibliography
1989 Volume 15 Issue 3-4 Pages
355-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Article type: Appendix
1989 Volume 15 Issue 3-4 Pages
356-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Article type: Appendix
1989 Volume 15 Issue 3-4 Pages
356-357
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Article type: Appendix
1989 Volume 15 Issue 3-4 Pages
358-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Article type: Appendix
1989 Volume 15 Issue 3-4 Pages
App2-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Article type: Cover
1989 Volume 15 Issue 3-4 Pages
Cover2-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
-
Article type: Cover
1989 Volume 15 Issue 3-4 Pages
Cover3-
Published: January 25, 1989
Released on J-STAGE: May 31, 2017
JOURNAL
FREE ACCESS
