Abstract
Thin films of tin were prepared by vacuum depositon on UHV-cleaved NaCl, KCl and KBr substrates at room temperature. Particles of tin grew graphoepitaxially on the steps of these substrates, whereas they grew epitaxially on the flat areas of the KCl and KBr substrates and oriented almost randomly on the flat area of the NaCl substrate. Monatomic spiral steps were prepared by ultrahigh vacuum sublimation of these substrates cleaved in ultrahigh vacuum. The results obtained from the particles of tin and indium deposited onto the respective spiral steps are as follows: The particles of tin were epitaxially grown on the monatomic steps of the KCl and KBr substrates, whereas the particles on the NaCl substrate were graphoepitaxially grown on a monatomic step. On the other hand, the particles of indium grew graphoepitaxially on the monatomic steps of all the substrates, though on the flat areas of the KCl and KBr substrates the particles grew in a random state and they grew epitaxially on the flat area of the NaCl substrate.
