Abstract
Crystal growth of cubic boron nitride (cBN) at high pressure is briefly reviewed. Recent success in the growth of large cBN crystals by using the temperature difference solvent method at high pressure made it possible to fabricate a functioonable cBN electronic device at high pressure. Since cBN is a good potential candidate as an wide-gap semiconductor material, further improvements, in the growth techniques at high pressure to a grade of the semiconductor technology is greatly desired.
