Abstract
Blue and green lasers have been made from ZnSe-based II-VI compounds. These laser wafers are grown by only molecular beam epitaxy (MBE), since successful doping techniques have been obtained in MBE process. Low-resistivity n- and p-type ZnSe was accomplished with Cl doping and nitrogen radical doping, respectively. MBE growth of n-type ZnSe: Cl and p-type ZnSe: N, and optical and electrical properties of these layers are described. Recent advances in znSe-based lasers are also reported.
