シリコン結晶中の微小欠陥が形成する格子歪の研究
1994 年 21 巻 1 号 p. 76-87
詳細
1994 年 21 巻 1 号 p. 76-87
Recent studies on minute strain fields in as-grown silicon single crystals using synchrotron radiation are described. These have been performed by means of plane wave X-ray topography using highly collimated X-rays with an angular divergence of less than 0.01 arcsec, With this method, minute strain fields in float-zone-grown Si crystals containing A- Nd D-defects, and rapidly cooled Czochralski-grown Si crystals have been imaged. It is shown that minute strain fields in the Si crystals can be quantitatively determined from the analysis of contrast in the topographs.
