日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
微小重力下での帯溶融法によるPbSnTe単結晶成長(<特集>無重力下における結晶成長)
岩井 荘八瀬川 勇三郎
著者情報
ジャーナル フリー

1994 年 21 巻 4 号 p. 424-429

詳細
抄録

A PbSnTe single crystal was grown by traveling the molten zone at the speed of 2 mm/hr for 4 hours under microgravity in space. Sn composition in the crystal grown without thermal convection in the molten zone was almost constant in the growth length above 5 mm from the seed crystal. Carrier mobility at 77 K in the crystal grown in space was 3 times as large as that in the crystal grown under the same growth condition on the earth, indicating the high quality of the crystal grown under microgravity.

著者関連情報
© 1994 日本結晶成長学会
前の記事 次の記事
feedback
Top