Abstract
We have successfully grown new piezoelectric single crystals, La_3Ga_5Si0_<14> (Langasite), with dimensions of 1 or 2 inches in diameter, by the Czochralski technique. La_3Ga_<5.5>Nb_<0.5>0_<14> (LGN) single crystals, which were developed by substituting Si^<4+> of Langasite with Nb^<5+> and Ga^<3+>, were also successfully grown. Device properties of Langasite and LGN resonators and lters were demonstrated. Both single crystals showed superior properties, which situated between thoseo of quartz and LiTa0_3 single crystals, for piezoelectric applications.
