抄録
The influence of the crucible rotation on the temperature distribution at the melt surface in Czochralski silicon growth has been studied by new CCD camera observation system. The thermal radiation energy from the melt surface is converted to temperature by blackbody calibration method and is recorded on video tapes as two-dimensional color images. The experimental results without a crystal showed the temperature distribution changes at the melt surface in three patterns: axisymmetric, n-folded (n≧2), and cellular patterns in order when the crucible rotation rate is increased. From three- dimensional time dependent calculations of the silicon melt flow in the down-scaled Czochralski configuration, the n-folded temperature distribution is qualitatively explained to be caused by the change of the melt flow due to baroclinic instability. The cellular temperature pattern at relative high crucible rotation rates is considered originating from Benard-Rayleigh and/or Marangoni-Benard instability.
