Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
The measurements for the amount Of evaporation of boron-doped silicon melt
Susumu MaedaMasaki KatoKeisei AbeHideo NakanishiKazutaka Terashima
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1997 Volume 24 Issue 2 Pages 81-

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Abstract
The weight variations of the borondoped silicon meIt due to the evaporation was measured. It was suggested that boron assisted the evaporation of the silicon melt when the temperature of silicon melt was high(> 1500℃). Oxygen transport mechanism in the borondoped silicon melt and the role of the boron will be discussed based on our experimental results.
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© 1997 The Japanese Association for Crystal Growth
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