Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Dissolution and Growth of Multicompoment Semiconductors Using a Chinese Recoverable satellite
Y Hayakawa, A Hirata, T Wada, D Hirose, T Yamaguchi, Y Okano, J Shimizu, N Imaishi, K Arafune, Y Kumagiri, X Zhong, X Xie, B Yuan, F Wu, Liu H, M Kumagawa
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1997 Volume 24 Issue 2 Pages 153-

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Abstract
Both dissolution of GaSb into InSb melt and growth of InGasb were performed using a chinese recoverable satellite. The In concentrational profile of the space sample was compared with that of the earth sample.
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© 1997 The Japanese Association for Crystal Growth
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