Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Crystal Growth and Physical Properties of La_3(Ga_<5・X>A1_X) SiO_<14>
M KumatoriyaH TakedaK ShimamuraH TakagiT Fukuda
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JOURNAL FREE ACCESS

1997 Volume 24 Issue 2 Pages 159-

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Abstract
Al substituted Langasrte crvstals,La_3(Ga_<5-X> Al_X)Si0_<14>were synthesized by solid phase reaction, μ-pulling down and Czochralski techniques. From the result of solid phase reaction,χ=2.0 was found to be limit of substitution. In χ=0.5 crystal which was grown by Czochralski method, electromechanical coupling coefficients, k_<26>and k_t compared favorably with that of La_3Ga_5Si0<14>
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© 1997 The Japanese Association for Crystal Growth
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