Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Step Sources in Epitaxial Lateral Overgrowth of InP
Zheng YANShigeya NARITSUKATatau NISHlNAGA
Author information
JOURNAL FREE ACCESS

1997 Volume 24 Issue 2 Pages 178-

Details
Abstract
In epitaxial lateral overgrowth(ELO), steps are found supplied from either misoriented substrate or screw dislocations. An atomically flat and step free ELO layer has been obtained when no screw dislocation exists. In most cases the vertical growth is concducted by the spiral steps. The sources of spiral steps have been found frequently located at corners of the ELO layers, where a high supersaturation is expected.
Content from these authors
© 1997 The Japanese Association for Crystal Growth
Previous article Next article
feedback
Top