日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
InP横方向成長におけるステップ源
嚴 峨成塚 重弥西永 頌
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1997 年 24 巻 2 号 p. 178-

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In epitaxial lateral overgrowth(ELO), steps are found supplied from either misoriented substrate or screw dislocations. An atomically flat and step free ELO layer has been obtained when no screw dislocation exists. In most cases the vertical growth is concducted by the spiral steps. The sources of spiral steps have been found frequently located at corners of the ELO layers, where a high supersaturation is expected.
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© 1997 日本結晶成長学会
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