Abstract
We have successfully grown undoped and RE^<3+>doped GdVO_4 single crystals by a modified Czochralski technique in which a steep temperature gradient was maintained at the interface during growth. We have investigated distribution coefficients of RE^<3+>ions in GdV0_4 single crystals. The value of the equilibrium distribution coefficient (k_0) of Yb3^<3+> in GdV0_4 single crystals have been determined to be 0.58.