Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Crystal quality of heteroepitaxial InP/Si
Hidefumi Mori, Masami Tachikawa
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1997 Volume 24 Issue 2 Pages 223-

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Abstract
In situ measurements were made of the etch pit density of InP/Si at the growth temperature using a PH3-HCI vapor phase etching method. It was found that the high dislocation density in InP/Si is caused by thermal stress.
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© 1997 The Japanese Association for Crystal Growth
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