Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Morphology Change of Oxygen Precipitates in Silicon Crystals(<Special Issue> What's New on Silicon Crystals!
Hiroyuki Fumimori
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1997 Volume 24 Issue 5 Pages 429-437

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Abstract
The morphology of thermally induced oxygen precipitates in Czochralski Silicon Crystals and its dependence upon oxygen supersaturation in Czochralski Silicon Crystals were investigated using transmission electron microscopy. The morphology of oxygen precipitates depend upon not only annealing temperatures but also the oxygen supersaturation. The oxygen precipitates near the surface denuded zone are octahedral, independent of annealing temperatures, This result demonstrates the oxygen concentration plays an important role in the morphology change. In this paper, we discuss the morphology of oxygen precipitates depending upon the oxygen supersaturation, based on the diagram of the morphology in snow crystals.
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© 1997 The Japanese Association for Crystal Growth
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