Abstract
The grown-in defects induced in CZ-Si during crystal growth was investigated. we used the non-destructive measurement method, Bright Field infrared laser Interferometer (known as Oxygen Precipitate Profiler; OPP), for the analysis of the number density, size and morphology of grown-in defects. TEM observation of grown-in defects was also performed using OPP and focused-ion-beam (FIB) for the TEM sample fabrication. It is revealed that the grown-in defects are octahedral void-like defects of 0.1-0.2μm. They degrade the GOI yield and therefore the GOI improvement is achieved by the reduction of the grown-in defects. The formation of the grown-in defects is supposed to occur in the temperature range between 1070℃ and 1100℃. The total volume of the grown-in defects per unit silicon volume is estimated to be constant value of 10^<12>-10^<13> nm^3/cm^3. The growth and decrease of density of grown-in defects are occurred in the same temperature range because the foormation mechanism could be the Ostwald ripening. Assuming the Ostwald ripening mechanism, the time dependence of size is indicated to be a reaction-limited phenomena.
