Abstract
We have investigated the taking-in process of the impurities in melt growth by Monte Carlo simulation on the diamond lattice. As for the roughness of the solid-melt interface of the equilibrium state, we found that the (111) surface is flat in the atomic level but the (100) surface is a rough surface. In the direction [111] growth, it was lateral growth by 2-dimensional nucleation and in the growth of [100] direction, the growth mode is adhesion growth. And, as for the thickness of the solid-melt interface, we found the smaller the taking-in of the impurity to the crystal is, the bigger the thickness become.
