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Article type: Cover
1998 Volume 25 Issue 3 Pages
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Article type: Appendix
1998 Volume 25 Issue 3 Pages
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Article type: Appendix
1998 Volume 25 Issue 3 Pages
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Article type: Appendix
1998 Volume 25 Issue 3 Pages
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Article type: Appendix
1998 Volume 25 Issue 3 Pages
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Article type: Appendix
1998 Volume 25 Issue 3 Pages
iv-vi
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Article type: Index
1998 Volume 25 Issue 3 Pages
vii-xix
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M. Higuchi, T. Togi, K. Kodaira
Article type: Article
1998 Volume 25 Issue 3 Pages
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Rutile single crystals 25 mm in diameter were grown by a newly developed pulling-down method with continuous feeding. An iridium crucible was used as a rf-suscepter and a melt-supporting plate. The used of a heat-shielding plate made of porous zirconia was essential to perform smooth seed touch and stable growth run.
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Kazutomo Abe, Mikio Higuchi, Kohei Kodaira
Article type: Article
1998 Volume 25 Issue 3 Pages
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Li_2B_4O_7 single crystals 40 mm in diameter and 100 mm long were successfully grown by the pulling-down method . Continuous Powder feeding system enabled to grow long crystals with a controlled diameter. The obtained crystals were water clear and had no macroscopjc defects such as bubbles and cracks.
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K. Niwa, Y. Furukawa, S. Takekawa, K. Kitamura
Article type: Article
1998 Volume 25 Issue 3 Pages
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We grew stoichiometric LiNbO_3 single crystals by the TSSG method from a stoichiometric melt with the Li/Nb ratio of 1.0, to which 7wt% K_2O was added as flux. In the case of growth along the z axis, as-grown crystals were spontaneously poled. The polarization direction was independent of seed composition and polarization direction of seeds.
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K. Kitamura, Y. Furukawa, K. Niwa, V. Gopalan, T.E. Mitchel
Article type: Article
1998 Volume 25 Issue 3 Pages
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We compared the electric fields required for the ferroelectric domain reversal between the conventional congruent LiNbO_3 crystal and stoichiometric one which was grown by the novel double crucible Czochralski method equipped with an automatic powder supply system. It turned out that the electric field for domain switching in the stoichiometric crystal was 3〜4 kV/mm. This value was much smaller (about one fifth) than that of the congruent crystal. The spontaneous polarization, Ps, didn't depend on the nonstoichiometry. We checked also the dependence of this domain switching nature on the proton density in the crystals. It was confirmed that the proton concentration had no influnece on the electric field for domain switching, internal field, and Ps. These results are suggesting that the stoichiometric LiNbO_3 crystal has a high controllability in ferroelectric domain switching and has a high excellence in the QPM device fabrication.
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K. Kitamura, Y. Furukawa, Y. Iyi, K. Niwa, H. Hatano
Article type: Article
1998 Volume 25 Issue 3 Pages
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We compared phoconductivity and photovoltaic current density of stoichiometirc, congurent. Mg-doped and Sc-doped LiNbO_3 cystals in order to interpret the mechanism of optical damage. Mg-doped and Sc-doped crystals with high optical damage resistance showed much smaller photovoltaic effect than that in stoichiometric crystal which exhibited considerably large optical damage. The optical damage is probably suppressed by the substitution of Li ion by Mg, Sc, Nb, which cause some change in original dipole structure of stoichiometric LiNbO_3
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Y. Furukawa, K. Kitamura, K Niwa, H. Hatano
Article type: Article
1998 Volume 25 Issue 3 Pages
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We have grown stoichiometric LiTaO_3 single crystals by using the Double-Crucible Czochralski method equipped with an automatic powder supply system. Investigations of optical properties of LiTaO_3 demonstrate that LiTaO_3 has great potential as an optimum photorefractive material for short wavelength laser applications.
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T. Kato, H. Takeda, K. Shimamura, T. Fukuda
Article type: Article
1998 Volume 25 Issue 3 Pages
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We have developed new substituted langasite crystals in order to increase piezoelectric constants. By solid state reaction and micro-pulling down technique, La_<2.75>Sr_<0.25>Ta_<0.625>Ga_<5.375>O_<14> and Sr_3TaGa_3Si_2O_<14> were obtained as single phase with langasite-type structure. These crystals with bulk size were also grown by the Czochralski technique.
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Makoto Kumatoriya, Hideto Sato, Takashi Fujii, Yoshimasa Hayashi
Article type: Article
1998 Volume 25 Issue 3 Pages
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Langasite single crystals, which were covered with polycrystals of the same material, were grown by the Czochralski method. The origin of this phenomenon was studied by observing the solid-liquid interface shape. It was found that this is related with the irregular formation of strong edge facets.
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T. Ishii, M. Mukaida, S. Miyazawa, T. Nishihara, S. Hayashi, M. Shinoh ...
Article type: Article
1998 Volume 25 Issue 3 Pages
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We investigated surface atoms of LiGaO_2 (001) substrate with a single domain structure by CAICISS and found that the atoms of easily etched surface are oxygen and those of hardly etched one are metal(Li,Ga). This relationship is well explained by the surface bonding model of ZnO proposed by Mariano. GaN thin film grew only on the metal surface of LiGaO_2 (001) substrate.
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N. Futagawa, A. Yoshikawa, K. Shimamura, T. Fukuda
Article type: Article
1998 Volume 25 Issue 3 Pages
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We have successfully grown Ca_8La_2(PO_4)_6O_2 single crystals as a substrate material for GaN epitaxy by the Czochralski technique. Grown Ca_8La_2(PO_4)_6O_2 single crystals showed high lattice matching (approximately 0.36%) and high transparency (from 350nm to 2300nm). Coefficience of thermal expansion was determined by high temperature powder X-ray diffraction method.
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H. Takeda, H. Tabata, K. Shimamura, T. Fukuda
Article type: Article
1998 Volume 25 Issue 3 Pages
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Bulk (La,Sr)(Al.Ta)O_3 single crystals were successfully grown by the Czochralski technique for a substrate material of GaN thin film. The lattice parameter and chemical composition of crystals were constant along the growth direction. Coloring of the grown crystals was discussed.
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M. Shibata, T. Furuya, H. Sakaguchi, S. Kuma
Article type: Article
1998 Volume 25 Issue 3 Pages
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GaN were synthesized by direct injection of NH_3 gas into liquid Ga melt at temperature between 900 and 980℃ under atmospheric pressure. A large amount of GaN powder was reproducibly obtained using a simple apparatus. The synthesized powder was characterized by SEM, XRD, PL and EDX, and was found to consist of fine crystals of hexagonal GaN of good quality.
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Shigenao Maruyama
Article type: Article
1998 Volume 25 Issue 3 Pages
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This paper describes numerical simulations of he combined heat transfer of thermal radiation and conduction in Czochralski silicon crystal growth furnace and radiation transfer of a floating zone furnace. In particular, the effect of specular reflection on the combined heat transfer simulations is investigated.
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S. Togawa, Y. Nishi, M. Kobayashi
Article type: Article
1998 Volume 25 Issue 3 Pages
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Numerical analysis of heat and mass transfer during FZ-Si crystal growth process has been performed to clarify the determination mechanism of radial resistivity profile. Surface temperature distribution of molten zone is considered as most effective driving force of flow and dominant factor for crystal quality.
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N. Miyazaki, Y. Kuroda
Article type: Article
1998 Volume 25 Issue 3 Pages
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Simulations of the dislocation density during single crystal growth were performed for a Si crystal and an InP crystal using a finite element computer code, in which a dislocation kinetics model called the Haasen-Sumino model was used as the constitutive equation of a crystal at elevated temperatures. The effects of elastic modulus and dopant atoms on the dislocation density were examined in the present study.
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H. Takeno, K. Aihara, Y. Hayamizu, K. Miki
Article type: Article
1998 Volume 25 Issue 3 Pages
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We have developed a practical computer simulation technique to predict the oxygen precipitation behavior in CZ-Si crystals. Our simulation can describe well the influence of crystal thermal history and heavy boron doping on the oxygen precipitation characteristics.
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T. Irisawa
Article type: Article
1998 Volume 25 Issue 3 Pages
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We have investigated the taking-in process of the impurities in melt growth by Monte Carlo simulation on the diamond lattice. As for the roughness of the solid-melt interface of the equilibrium state, we found that the (111) surface is flat in the atomic level but the (100) surface is a rough surface. In the direction [111] growth, it was lateral growth by 2-dimensional nucleation and in the growth of [100] direction, the growth mode is adhesion growth. And, as for the thickness of the solid-melt interface, we found the smaller the taking-in of the impurity to the crystal is, the bigger the thickness become.
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Toshikazu Takada
Article type: Article
1998 Volume 25 Issue 3 Pages
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Molecular simulations based on the molecular orbital theory became useful to study the mechanism of surface reactions of simi-conductor. In this presentation, results of the molecular orbital calculations on Ti plasma enhanced CVD are reported and also, as a future image of such molecular simulations, a new system named virtual microscope is introduced.
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K. Ishikawa, D. S. Fu, S. Yamada, H. Suzuki
Article type: Article
1998 Volume 25 Issue 3 Pages
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Ferroelectric PZT films were deposited by a sol-gel process on a seeding layer of PbTiO_3 which was prepared by a pulsed laser deposition. Highly c-axis oriented PZT films were obtained when the seeding layer was deposited on the substrate at room temperature. Results were explained by terms of "two step growth".
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Y. Ohshita, K. Watanabe
Article type: Article
1998 Volume 25 Issue 3 Pages
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K Matsuda, Y Matsunaga, K Isaji, H Tatsuoka, H Kuwabara, P D Brown, Y ...
Article type: Article
1998 Volume 25 Issue 3 Pages
A21-
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MnSi/Si thin films grown in the presence of an Sb flux were charactarized by transmission electron microscopy (TEM). The observation revealed that a high quality epitaxial thin films with smooth interface between MnSi and Si (111) substrate was obtained.
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Y. Makino, A. Unno, Y. Nakanishi, H. Tatsuoka, H. Kuwabara
Article type: Article
1998 Volume 25 Issue 3 Pages
A22-
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We investigated the atomic layer growth of CdTe and ZnTe by Hot-wall epitaxy. Resuled growth rate shows the existence of plateau of 0.5 monolayer/cycle in the substrate temperature range between 260 and 320℃ for CdTe, between 240 and 280℃ for ZnTe.
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T. Matsumoto, H. Tatsuoka, Y. Nakanishi, H. Kuwabara
Article type: Article
1998 Volume 25 Issue 3 Pages
A23-
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Zb-MnTe layers were grown by Mn diffusion into ZnTe layers in the presence of a Sb flux. It was found that the conversion of ZnTe to zb-MnTe was enhanced under the existence of Sb flux. The growth rate of the zb-MnTe is increased,as increasing the substrate temperature and total thickness of zb-MnTe is limited by total amount of Mn atoms during the growth.
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Kazuhiro Shimizu, Masanobu Kasuga, Koji Yano, Azuma Shimizu
Article type: Article
1998 Volume 25 Issue 3 Pages
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CdTe(111) layers were grown on sapphire(0001) substrates by hot wall epitaxy. Substrates were etched in solution (H_2SO_4+H_3PO_4 ) at 300℃ and were thermally cleaned at 400, 500 and 600℃ for 30 min in vacuum or H_2 atmosphere. X-ray djJfraction C(RD) and back-reflection Laue pattern of layers indicate that highly oriented CdTe layers become more single-crystal like by thermal cleaning of substrates.
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Kazunori Minegishi, Masanobu Kasuga, Koji Yano, Azuma Shimizu
Article type: Article
1998 Volume 25 Issue 3 Pages
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ZnO is a II-VI compound semiconductor promising for UV light emitting diodes and lasers. Undoped ZnO usually shows n-type conduction and emits green luminescence, which may originate from oxygen vacancy. N-doped ZnO films grown by CVD method using NH_3 showed p-type conduction or n-type conduction of higher resistivity and the green photo luminescence vanished.
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Haruki Yokoyama, Takashi Kobayashi
Article type: Article
1998 Volume 25 Issue 3 Pages
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We studied the As incorporation into InP layer and abruptness at InP/InAlAs interface on InAlAs/InP/InAlAs structures grown by MOVPE. Although the condensed As was observed in InP layer by Auger analysis, it was found that this As incorporation was suppressed when InP layer was grown under high-V/III ratio condition. Furthermore, from PL and TEM, it was confirmed that this growth improved the abruptness at InP/InAlAs heterointerface.
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[in Japanese], [in Japanese], [in Japanese], [in Japanese], [in Japane ...
Article type: Article
1998 Volume 25 Issue 3 Pages
A27-
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The hydrogen chemisorption on the GaAs (111)A Ga surface is investigated under atmospheric pressure using the in situ monitoring system, which consists of GaAs halogen transport atomic layer epitaxy (ALE) and the surface photoabsorption (SPA) systems. Furthermore, in order to determine the atomic configuration on the surface, ab initio molecular dynamics calculation is performed.
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Suzuka Nishimura, Kazutaka Terashima
Article type: Article
1998 Volume 25 Issue 3 Pages
A28-
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BP epitaxial layer on Si(100) has been successfully grown by using BCl_3 and PCl_3 as source materials. The layer obtained is markedly flat and continuous. The growth technique and characterization will be discussed in terms of PL, SEM and TEM observations.
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S. Jo, Y. Gotoh
Article type: Article
1998 Volume 25 Issue 3 Pages
A29-
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The growth modes of Nd deposited on Mo(110) surface have been studied using RHEED and AFM. At 1ML deposition at room temperature, the c(5×3) surface structure appeared which forms the CSL lattice for the Mo surface. At the deposition thickness more than 2ML, the crystallites with Nd(0001) plan* appeared on the c(5×3) structure. The growth modes are the Frank-van der Merwe type at room temperature and the Stranski-Krastanov type at temperatures higher than 500℃.
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K. Kamei, Y. Gotoh
Article type: Article
1998 Volume 25 Issue 3 Pages
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Surface structures and growth modes of Al deposited on Mo(110) surface have been investigated using high energy electron diffraction(RHEED).After the deposition of Al at room temperature, the specimen was heated at constant temperatures. Basically, Al deposited on the Mo(110) surface at room temperature grows by pseudo Frank-van der Merwe growth mode taking an epitaxial orientation of the Kurdjumov-Sachs relation. From the variation of RHEED Pattern it may be considered that in high temperature condensation AI grows by the Stranski-Krastanov growth mode.
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H. Habuka, S. Akiyama, T. Otsuka, M. Shimada, K. Okuyama
Article type: Article
1998 Volume 25 Issue 3 Pages
A31-
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Chemical species in gas phase for silicon epitaxial growth in SiHCl_3-H_2 system are studied at 973-1273K at 1 atm using quadrupole mass spectroscopy. The dominant silicon species in the exhaust gas out of the horizontal cold-wall single-wafer reactor is observed to be SiHCl_3.
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T. Kimoto, H. Matsunami
Article type: Article
1998 Volume 25 Issue 3 Pages
A32-
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Silicon carbide (SiC) can be homoepitaxially grown through step-flow growth on off-oriented α-SiC{0001} substrates (step-controlled epitaxy) by chemical vapor deposition. Optical and electrical characterization elucidated high quality and high purity of SiC epilayers, enough for high-power and high-temperature device applications.
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T. Kimoto, T. Yamamoto, H. Matsunami
Article type: Article
1998 Volume 25 Issue 3 Pages
A33-
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Homoepitaxial growth of 4H-silicon carbide (4H-SiC) by chemical vapor deposition (CVD) is carried out on SiC (0001), (0001^^-), (112^^-0), and (11^^-00) substrates. Although the growth rate is not sensitive to the substrate orientation, clear dependencies are observed in surface morphology and impurity doping characteristics.
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T Kaneko, N Miyakawa, H Sone, H Yamazaki
Article type: Article
1998 Volume 25 Issue 3 Pages
A34-
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a-SiC:H films are grown on Si(100) substrates by PCVD(Plasma enhanced Chemical Vapor Deposision), using CH_3SiH_3 (MMeSi) as a source material. The ratio of Si in growth filmes depends on the plasma power density. The growth mechanisism of PCVD is investigated by Optical Emission Spectroscopy(OES), which can identify activated and ionized atoms and molecules.
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T. Kaneko, N. Miyakawa, H. Sone, D. Yamada
Article type: Article
1998 Volume 25 Issue 3 Pages
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Silicon carbide thin films are deposited on silicon single crystal substrates by CVD using CH_3SiCl_3(MTS) as a source. The orientation of films are analyzed by X-ray Diffraction and it is found that the orientation depends on the film thickness.
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T. Kaneko, N. Miyakawa, H. Sone
Article type: Article
1998 Volume 25 Issue 3 Pages
A36-
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The growth process of SiC-CVD was investigated by thermogravimeter, using MTS. The temperature dependence and MTS partial pressure dependence of SiC growth rate were examined. The partial pressure dependence was explained on the basis of the two sites competitive adsorption model.
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Yuuki Ojima, Seiji Kimura, Toshihiko Nakada, Chihiro Kaito, Yoshio Sai ...
Article type: Article
1998 Volume 25 Issue 3 Pages
A37-
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Silicon carbide formation by reactions of carbon Particle - silicon oxide film(caseI and silicon particle-carbon film(case II) was studied electron microscopically. In the caseI, diffusion of silicon atoms from silicon crystal in silicon oxide film took place above 900℃ in vacuum. In the case II, diffusion of carbon atoms to the silicon particles took place even at room temperature. Singularity of nano-substance has been elucidated experimentally.
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H. Tochishita, A. Yabe, N. Murata, Y. Nishioka, Y. Nanishi, M. Kadota
Article type: Article
1998 Volume 25 Issue 3 Pages
A38-
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GaN films were grown on C-axis oriented polycrstalline ZnO/Si by ECR-MBE. PL intensity of GaN on ZnO/Si was stronger than that of GaN on silica glass and sapphire grown by ECR-MBE. GaN on ZnO/Si was polycrystal with C-axis oriented, which was confirmed by XRD, RHEED, TEM and SEM.
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Naoya Murata, Hikari Tochishita, Yasushi Nanishi
Article type: Article
1998 Volume 25 Issue 3 Pages
A39-
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GaN layers were grown on silica glass substrate by ECR(electron cyclotron resonance)-MBE. GaN Iayers grown on silica glass exhibited strong photoluminescence comparable to those of GaN grown on sapphire substrates and PL peak position was around near band edge emission of single hexagnal GaN. In addition, the full width at half maximum (FWHM) of GaN grown on silica glass was much small than that of GaN grown on sapphire.
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Y. Chiba, M. Nobata, Y. Nishioka, Y. Kobayashi, Y. Nanishi
Article type: Article
1998 Volume 25 Issue 3 Pages
A40-
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We have studied ECR-MBE growth of GaN using nitrogen-hydrogen mixed gas plasma as a group-V source. In highly Ga-rich growth condition, GaN growth rate was drastically increased using nitrogen-hydrogen mixed gas plasma. We consider that the effective V/III ratio is increased by addition of the hydrogen into nitrogen plasma and reactive excited group-V species are generated by nitrogen-hydrogen mixed gas plasma.
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T. Ito, M. Yanagihara, K. Ohtsuka, K. Kuwahara, M. Sumiya, Y. Takano, ...
Article type: Article
1998 Volume 25 Issue 3 Pages
A41-
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Buffer layer annealing conditions were investigated in order to obtain high quality GaN grown layers. It was found that the GaN grown layers with good crystallinity could be grown irrespective of buffer layer thickness by optimizing an annealing condition.
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Y. Kawaguchi, S. Nambu, H. Sone, H. Miyake, K. Hiramatsu, N. Sawaki
Article type: Article
1998 Volume 25 Issue 3 Pages
A42-
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We studied selective area growth (SAG) of GaN using tungsten(W) mask. The selectivity of the GaN growth on window regions was excellent. The structures of the GaN depended on the direction of stripe patterns. If the stripe was along the <112^^-0> crystal axis, the triangular structure with {11^^-01} facets was formed. If the stripe was along the <11^^-00> axis, the trapezoidal structure with a smooth (0001) surface on the top and rough surfaces on both sides was obtained. The lateral overgrowth of GaN on the W mask occurred for the both cases.
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Akinori KOUKITU, Hisashi SEKI
Article type: Article
1998 Volume 25 Issue 3 Pages
A43-
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The effect of hydrogen during the MOVPE growth of group III nitrides is investigated from a thermodynamic point view. The effect of hydrogen is reported for the driving force for the deposition of binary nitrides, AlN, GaN and InN. The effect of hydrogen for the InGaN growth is discussed for the vapor-solid relationship. The difference between the growth reaction of the indium containing nitrides and that of other III-V compounds is also discussed.
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