Abstract
CdTe(111) layers were grown on sapphire(0001) substrates by hot wall epitaxy. Substrates were etched in solution (H_2SO_4+H_3PO_4 ) at 300℃ and were thermally cleaned at 400, 500 and 600℃ for 30 min in vacuum or H_2 atmosphere. X-ray djJfraction C(RD) and back-reflection Laue pattern of layers indicate that highly oriented CdTe layers become more single-crystal like by thermal cleaning of substrates.
