Abstract
We studied the As incorporation into InP layer and abruptness at InP/InAlAs interface on InAlAs/InP/InAlAs structures grown by MOVPE. Although the condensed As was observed in InP layer by Auger analysis, it was found that this As incorporation was suppressed when InP layer was grown under high-V/III ratio condition. Furthermore, from PL and TEM, it was confirmed that this growth improved the abruptness at InP/InAlAs heterointerface.
