モノメチルシランを用いたRFプラズマCVD法によるシリコンカーバイドの成膜 : 気相成長III
1998 年 25 巻 3 号 p. A34-
詳細
1998 年 25 巻 3 号 p. A34-
a-SiC:H films are grown on Si(100) substrates by PCVD(Plasma enhanced Chemical Vapor Deposision), using CH_3SiH_3 (MMeSi) as a source material. The ratio of Si in growth filmes depends on the plasma power density. The growth mechanisism of PCVD is investigated by Optical Emission Spectroscopy(OES), which can identify activated and ionized atoms and molecules.
