Abstract
Silicon carbide formation by reactions of carbon Particle - silicon oxide film(caseI and silicon particle-carbon film(case II) was studied electron microscopically. In the caseI, diffusion of silicon atoms from silicon crystal in silicon oxide film took place above 900℃ in vacuum. In the case II, diffusion of carbon atoms to the silicon particles took place even at room temperature. Singularity of nano-substance has been elucidated experimentally.
