Abstract
GaN layers were grown on silica glass substrate by ECR(electron cyclotron resonance)-MBE. GaN Iayers grown on silica glass exhibited strong photoluminescence comparable to those of GaN grown on sapphire substrates and PL peak position was around near band edge emission of single hexagnal GaN. In addition, the full width at half maximum (FWHM) of GaN grown on silica glass was much small than that of GaN grown on sapphire.
