Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Surface tension of pure and boron doped silicon melt and its temperature dependence
K. NakazatoH. NakanishiK. KannoH. TakizawaS. MaedaK. Terashima
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1998 Volume 25 Issue 3 Pages A72-

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Abstract
We measured the surface tension of pure and boron doped (5×10^<19>atoms/cm^3) silicon melt and its temperature dependence by the ring technique. Pure and born doped silicon melt indicate a negative correlation between surface tension and temperature, respectively.
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© 1998 The Japanese Association for Crystal Growth
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