The In_xGa_<1-x> As (x=0.06) bridge layers grown on SiN_x-masked GaAs (111)B substrates with trenches by liquid phase epitaxial method were characterized by photoluminescence measurements. For epitaxially lateral overgrown and bridge layers, an intense with sharp FWHM spectrum was observed. This result was consistent with the low etch pit density measured in these layers.
