Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Na Flux Growth of GaN Single Crystals(<Special Issue>Bulk Nitride-Semiconductors)
Hisanori YamaneMasahiko Shimada
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1998 Volume 25 Issue 4 Pages 152-156

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Abstract
GaN single crystals with a size of 0.2-2.0 mm were prepared in a stainless-steel tube at 600 to 800℃ from Ga using a Na flux and N_2 from the thermal decomposition of sodium azide, NaN_3. The morphology of the single crystals grown in a Na flux was prismatic or platelet. The crystals were characterized by Auger electron spectroscopy (AES), energy dispersive X-ray spectroscopy (EDX) and cathodoluminescence spectroscopy. Hall measurements were carried out for platelet single crystals with a size of 0.4-0.7 mm. The polarity was determined by X-ray diffraction using X-ray anomalous dispersion.
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© 1998 The Japanese Association for Crystal Growth
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