Abstract
A bulk GaN and a 'Quasi bulk' crystal which was selectively grown on a SiO_2-patterned GaN substrate were successfully obtained by a sublimation method. The source powder used in the growth was analyzed to show that the contributing species to the growth were the compounds composed of Ga, N and H. Characterization by X-ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and so on, demonstrated that a bulk GaN was of high quality.
