Abstract
High-quality ZnS homoepitaxial films have been grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on ZnS hulk substrates prepared by an iodine-transport method. Photoluminescence spectra of the ZnS homoepitaxial films at 4.2 K were dominated by the radiative recombination of excitonic transitions. In addition,the homoepitaxial growth of ZnS by molecular beam epitaxy (MBE) was performed on MOCVD-grown ZnS thick films. It was found that the contamination of residual impurity was much reduced in the ZnS homoepitaxial films grown by MBE.
