Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
23aB11 Growth of ZnS on CaF_2 by Solvent Evaporation Epitaxy method
Ken MaedaMikito MamiyaFumihiko Takei
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1999 Volume 26 Issue 2 Pages 96-

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Abstract
ZnS epitaxial layer on CaF_2 (100) is grown by the Solvent Evaporation Epitaxy method using PbCl_2 as a solvent. To avoid ZnS decomposition, the growth reaction is carried out under sulfur-enriched atmosphere. We have obtained ZnS layer at temperatures higher than 600℃.
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© 1999 The Japanese Association for Crystal Growth
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