Abstract
The pressure controlled solution growth method has been newly developed and applied to the growth of bulk GaN single crystals. Bulk GaN crystals with the size of from 7×7 to 10×10mm^2 could be reproducibly obtained and it wa8 found that they are single crystals oriented to (0001) by X-ray diffraction measurement. From the TEM and PL measurements, they were found to be of good crystallinity.
