Abstract
A computer code is developed for simulation of the dislocation density in a bulk single crystal during the Czochralski (CZ) growth process. In this computer code, the shape of crystal-melt interface and the temperature in a crystal at an arbitrary time are determined by linear interpolation of the discrete results that are obtained by heat conduction analysis of a CZ single crystal growth system. A dislocation kinetics model called the Haasen-Sumino model is used as the constitutive equation. In this model, the creep strain rate is related to the dislocation density, and this model extended to the multiaxial stress state is incorporated into a finite element elastic creep analysis program for axisymmetric bodies. Dislocation density analyses are per-formed using this computer code for Si, InP and GaAs bulk single crystal. The present analyses indicate a W-type dislocation density distribution across the diameter in InP and GaAs single crystals that can be observed in actual CZ growth of InP and GaAs.
