Abstract
Dislocation behavior in the interface between boron-doped seed and crystal grown by the Czochralski method was examined by X-ray topography. It is found that dislocation-free silicon crystals can be grown from heavily and lightly boron-doped silicon melts without the Dash-necking process using a boron-doped seed with boron concentration of 1〜7x10^<18> atoms/cm^3.
