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Article type: Cover
2000 Volume 27 Issue 1 Pages
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Article type: Appendix
2000 Volume 27 Issue 1 Pages
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Article type: Appendix
2000 Volume 27 Issue 1 Pages
i-ii
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Article type: Appendix
2000 Volume 27 Issue 1 Pages
iii-iv
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Article type: Appendix
2000 Volume 27 Issue 1 Pages
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Article type: Appendix
2000 Volume 27 Issue 1 Pages
viii-xxv
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H. Yamagishi, M. Kuramoto, Y. Shiraishi, M. Machida, K. Takano, N. Tak ...
Article type: Article
2000 Volume 27 Issue 1 Pages
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Tensile test of Si subsidiary cone was investigated up to 1073 K The temperature of Si subsidiary cone at certain crystal weight up to 400 kg during CZ crystal growth was also calculated by global heat transfer numerical simulation. We obtained that we can sustain a CZ growing Si crystal up to 400 kg by a safety factor of 2.
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T. Taishi, X. Huang, T. Fukami, K. Hoshikawa
Article type: Article
2000 Volume 27 Issue 1 Pages
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Dislocation behavior in the interface between boron-doped seed and crystal grown by the Czochralski method was examined by X-ray topography. It is found that dislocation-free silicon crystals can be grown from heavily and lightly boron-doped silicon melts without the Dash-necking process using a boron-doped seed with boron concentration of 1〜7x10^<18> atoms/cm^3.
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X. Huang, T. Taishi, T. Wang, K. Hoshikawa
Article type: Article
2000 Volume 27 Issue 1 Pages
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Temperature distribution in the Czochralski (CZ) Si crystal growth has been measured using a thermocouple of differential type. It is found that temperature gradient in the CZ-Si crystal growth increased with increasing the growth rate. The results obtained by the present measurement are al so compared with those obtained by the conventional measurement.
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A. Natsume, K. Tanahashi, N. Inoue, A. Mori
Article type: Article
2000 Volume 27 Issue 1 Pages
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Dependence of temperature gradient in the CZ Si crystal on the growth rate was examined from the reported measurement result and the positive dependence was found. The mechanism is discussed in terms of the heat flow in the crystal and the solid-liquid interface shape.
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Yuren WANG, Koichi KAKIMOTO
Article type: Article
2000 Volume 27 Issue 1 Pages
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K. Terashima, K. Kanno, T. Tuchiya
Article type: Article
2000 Volume 27 Issue 1 Pages
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During the measurement of silicon melt density it has been found the melts climb up to a hotter area under some conditions. This phenomenon makes us some troubles to measure melt density by the Archimedian technique with SiC coated carbon bobs. It should be noted that the density decreases with decreasing melt temperature near the solidification point. The silicon melt density measured will be discussed.
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K. Terashima, S. Nishimura
Article type: Article
2000 Volume 27 Issue 1 Pages
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The convention of silicon melts is activated widely with adding boron into the silicon melts. This variation enhances the resolution rate of crucible and evaporation rate of SiO from the melt surface. This is mainly due to the decrease of viscosity of melts.
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K. Yamahara, X. Huang, Y. Tsurita, K. Hoshikawa
Article type: Article
2000 Volume 27 Issue 1 Pages
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Surface condition of silica glass reacting with silicon melt was investigated by in-situ observation, in order to clarify the effect of raw materials for silica crucibles used in CZ-Si crystal growth. It was found that the density of brownish rings in natural quartz glass was higher than that in synthetic silica glass. In addition, devitrification distinguished from brownish rings was observed as white spots at the interface in the case of natural quartz glass.
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S. Sakai, X. Huang, K. Hoshikawa, Y. Okano
Article type: Article
2000 Volume 27 Issue 1 Pages
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In order to investigate the oxygen transport phenomena from silica glass to silicon melt, numerical simulation based on the drop experiment has been carried out. In this analysis, the chemical reaction and diffusion transport phenomena at the free surface of silicon drop were considered, and the effect of the magnetic field on the oxygen transport was also examined.
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Koichi KAKIMOTO
Article type: Article
2000 Volume 27 Issue 1 Pages
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Mechanism of oxygen-incorporation into silicon single crystals from the melt under inhomogeneous magnetic fields was discussed using three-dimensional time-dependent calculation. Distribution of magnetic field is calculated from Biot-Savart's eq. by taking into account finite diameter of solenoids. Distributions of electric potential and oxygen concentration were modified by the inhomogeneous distribution of the magnetic fields.
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Minya Ma, Toshiharu Irisawa, Tomoya Ogawa
Article type: Article
2000 Volume 27 Issue 1 Pages
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It is well known that the OSF-rings are generated in the CZ-Si crystal, annealing at a high temperature for several hours. Many observations showed that oxygen precipitates with high density inhomogeneously appeared in OSF-ring area. We newly observed the dark strips in this region by photoluminescence image. TEM analysis further exposed that the dark stripes are related to the stacking faults.
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Masahito Watanabe, Minoru Eguchi, Taketoshi Hibiya
Article type: Article
2000 Volume 27 Issue 1 Pages
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We observed spontaneous rotation of Si melt in a magnetic field using an electrical conducting crucible. This rotation is caused by the effect of thermoelectric magnetohydrodynamics.
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K. Horie, M. Kasuga
Article type: Article
2000 Volume 27 Issue 1 Pages
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This study aims to make clear the flow of melts in Magnetic Czochralski method. We suggested a new way to infer convection of melt from eddy current distribution inside the melt, which is calculated from measurement of induced magnetic field at outside the melt. At this time, we substitute a conductive rotating top as a very simple model for melt and estimate eddy current in simulation experiment.
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Kazumasa Hiramatsu
Article type: Article
2000 Volume 27 Issue 1 Pages
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GaN epitaxial substrates are utilized to fabricate GaN based optical and electronic devices such as LDs, LEDs, photodetectors, FETS etc. However, the GaN includes a large number of dislocations, so considerable efforts have been made towards reducing the dislocation density. In this report, present states and problems of the crystal growth technique of the GaN epitaxial substrate are reviewed.
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M. Tatsumi, R. Hirota, T. Kusao
Article type: Article
2000 Volume 27 Issue 1 Pages
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The growth of single crystals from a vapor phase has been tried. GaN were synthesized from nitrogen gas activated by microwave and gallium vapor. Synthesized GaN thin film on a sapphire substrate was oriented to <0001> orientation. By Optimizing the power of microwave Small GaN single crystal having diameter of 30μm were obtained.
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Shiro Sakai, Katsushi Nishino
Article type: Article
2000 Volume 27 Issue 1 Pages
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The effects of dislocation in GaN were described through the comparison between homoepitaxial and heteroepitaxial InGaN/GaN multiple structures.
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A. Wakahara, A. Yoshida, O. Oda, Y. Seki, K. Kainosho
Article type: Article
2000 Volume 27 Issue 1 Pages
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GaN thick film was grown on NdGaO_3 substrate by the HVPE process. To prevent the decomposition of NdGaO_3 substrate by NH_3, a low-temperature-grown GaN protective layer and annealing in N_2 atmosphere were effective. By optimizing the growth conditions, a freestanding GaN wafer with a 2-inch-scale was achieved. Both plan-view TEM and CL images suggested that the dislocation density of freestanding GaN wafers could be expected to be as low as 10^6cm^<-2>. The PL spectrum indicated strong near-band-edge emission without deep-level related emission. The results indicated that 2-inch-scale GaN wafers with low defect density were achieved using this growth method.
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Y. TAKEDA, M. TABUCHI
Article type: Article
2000 Volume 27 Issue 1 Pages
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The group-III nitrides are mostly grown on sapphire substrates with a low-temperature deposited buffer layers. Since the whole layers are of a large variety in terms of crystal structures and crystal quality, a very versatile characterization technique is necessary to reveal the structures. In this paper. characterization of an extremely thin initial layer, the buffer layer, thick GaN layers, and the whole structure of multilayers are investigated by the X-ray CTR scattering and X-ray reflectivity measurements.
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M. Shimada, K. Okuyama, H. Setyawan, Y. Iyechika, T. Maeda
Article type: Article
2000 Volume 27 Issue 1 Pages
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The effects of operation conditions of a vertical MOCVD reactor for GaN thin film preparation are studied. Numerical simulation results reproduce well the measured change of growth rate distribution with pressure and flow rate. The change of growth rate distribution is found to be caused by a change in flow pattern in the reactor which affects GaN precursor concentration distribution above the substrate.
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Satoshi Kurai, Shunchi Kubo, Tomokazu Okazaki, Tsunemasa Taguchi, Pete ...
Article type: Article
2000 Volume 27 Issue 1 Pages
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The MBE growth using ammonia gas as a nitrogen source was carried out. Flat Ga-polar surface was obtained by ammonia gas source MBE. Sharp and strong donor-bound exciton and free exciton line were appeared in photoluminescence measurement, indicating high-crystalline quality of GaN grown by arnmonia gas source MBE..
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T. Araki, N. Juuni, M. Kijima, Y. Chiba, Y. Nanishi
Article type: Article
2000 Volume 27 Issue 1 Pages
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Structural characterization of GaN grown on GaN templates with a different polar-surface by ECR-MBE using hydrogen-nitrogen mixed gas plasma was carried out. Changes in structure and surface morphology were compared between the GaN grown on N-polar template and those on Ga-polar template.
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M. Yamada, R. Suemoto, H. Yamashita, K. Pak, Y. Takamtsu
Article type: Article
2000 Volume 27 Issue 1 Pages
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Tertiarybutylhydrazine(TBHy) is one of the alternative nitrogen sources to ammonia. We investigated growth behavior of gas-source MBE grown GaN epilayers using TBHy by in-situ reflection high-energy electron diffraction (RHEED). It is found that the nitridation of sapphire surface occurred under TBHy irradiation at 900℃ above 10 min. GaN firms with crystal phase of hexagonalcubic GaN (c-GaN) can be obtained, which depended growth conditions.
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Seikoh Yoshida, Yoshiteru Itoh, Junjiro Kikawa
Article type: Article
2000 Volume 27 Issue 1 Pages
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GaNPs were grown at different growth temperatures using a photo-assisted MOCVD. After that GaNPs were annealed at different temperatures. These GaNPs were characterized by SIMS. Xray diffraction and photoluminescence measurement.
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K. Morimoto, A. Natsume, N. Inoue
Article type: Article
2000 Volume 27 Issue 1 Pages
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The inclination of subflow tube gives a large influence on the lateral growth rate of GaN. Under the optimum inclination, the reactant gas stays long on the substrate surface , which leads to the efficient decomposition of NH_3, and drains out on the substrate to all directions, which promotes both the lateral and vertical growth rate.
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A Koukitu, M. Mayumi, F. Satoh, Y. Kugagai
Article type: Article
2000 Volume 27 Issue 1 Pages
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Decomposition of GaN on its surface was investigated under atnospheric pressure using in situ gravimetric monitoring (GM) method. It was found that the GaN decomposition did not occur with existence NH_3 flow both in the H_2 carrier gas and in the He carrier gas. The decomposition rate is proportional to the P_<H2>^<3/2>. This relation indicates that the decomposition of GaNis, limited by the reaction of GaN(surface) + 3/2H_2(g) → Ga(surface) + NH_3(g).
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T. Detchprohm, M. Yano, R. Nakamura, S. Sano, H. Amano, I. Akasaki
Article type: Article
2000 Volume 27 Issue 1 Pages
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Periodically grooved substrates of c-plane sapphire. Si(111) and 6H-SiC (0001) were used for heteroepitaxy of GaN single crystal in metal organic vapor phase epitaxy (MOVPE) method. Our proposed technique is capable of preparing GaN single crystal with low dislocation density and improvement in PL peak intensity.
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S. Nishimura, S. Matsumoto, K. Terashima
Article type: Article
2000 Volume 27 Issue 1 Pages
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The growth of C-GaN on Si substrates has been carried out by using BP buffer layer. We have successfully grown C-GaN epitaxial layer on Si(100) substrates with 10×10mm^2 area. The growth of C-GaN on Si will be discussed.
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D. H. Cho, M. Tanaka, Y. Suzuki, K. Pak
Article type: Article
2000 Volume 27 Issue 1 Pages
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For the first time, we attempted to grow maskless selective epitaxy (MLSE) of InGaN on GaAs (100), (111)A, (111)B substrates by using a low-energy focused ion beam (LEFIB). Thus, we obtained maskless selective epitaxial films of cubic InGaN/GaAs (100) and hexagonal InGaN/GaAs (111)A. B by using an InGa LEFIB from the InGa liquid alloy ion source and dimethylhydrazine (DMHy) [(CH_3)2N2H2] as Ga and N sources, respectively.
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M. Narukawa, H. Mizutani, K. Nishiyama, A. Motogaito, H. Miyake, K. Hi ...
Article type: Article
2000 Volume 27 Issue 1 Pages
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Characterization of GaN grown by FACELO (Facet Controlled ELO) technique was carried out. Dislocation density of GaN epitaxial layer was reduced to the order of 10^6cm^<-2> via FACELO. It was also found that tilt of c-axis of the FACELO GaN was small. Temperature dependence of PL spectra of the FACELO GaN shows quality of the crystal was fairly good.
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S. Tanaka, Y. Kawaguchi, K. Yamada, N. Sawaki, M. Hibino, K. Hiramatsu
Article type: Article
2000 Volume 27 Issue 1 Pages
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The crystalline structure of GaN grown by MOVPE on SiO2-stripe-patterned (111)Si, using AlGaN intermediate layer, was observed by transmission electron microscope for several growth stages. Islands growth of AlGaN occurred both in the window region and on the mask. But, only AlGaN in the window region serves as nucleation center for the GaN growth. These GaN islands occurred in the window region coalesce and form a stripe structure. Mainly observed defects in the GaN stripes are threading dislocations, which are generated by coalescence of GaN islands. Bending of the threading dislocations was observed.
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H. Kyouzu, M. Araki, M. Tabuchi, Y. Takeda, H. Amano, I. Akasaki
Article type: Article
2000 Volume 27 Issue 1 Pages
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GaN layers with low-temperature (LT) GaN buffer layers were grown on sapphire substrates by OMVPE. The samples were investigated by X-ray CTR. X-ray reflectivity and AFM measurements. The results of the measurements showed that quality of the grown layers changed sensitively with the change of the growth process of the buffer layer.
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K. Takada, T. Ogura, T. Nishinaga
Article type: Article
2000 Volume 27 Issue 1 Pages
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The formation process of GaAs pyramids on GaAs (III) B patterned substrate was monitored in real-time by microprobe-RHEED/SEM installed in MBE chamber and the change in top size of truncated pyramid was measured. By changing As pressure, we could decrease and increase the top size in reversible manner. With this technique we could control the top size on which 3D structure can be fabricated.
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Y. Matsunaga, S Naritsuka, T. Nishinaga
Article type: Article
2000 Volume 27 Issue 1 Pages
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Dependence of reaction temperature and miscut angles on step bunching upon vicinal Si (001) surfaces after As deposition was studied with STM. The step bunching easily emerges after As deposition and an increase in the miscut angle enhanced it. The crystallization process of GaAs buffer layers on Si substrates was also studied. It was found that the surface steps largely influence the crystallization of the buffer layers.
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Ryuji Misawa, Yoshitaka Morishita, Katsuaki Sato
Article type: Article
2000 Volume 27 Issue 1 Pages
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In this work, we report on epitaxital growth of GaMnAS grown by sequential deposition of GaAs,Mn at low temperature. The GaMnAS grown by this method resulted in a higher Mn concentration than (Ga,Mn)As prepared by co-deposition method.
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S. Kohda, N. Harima, K Matsunaga, K. Asai, J. T. Nelson, T. Ohachi
Article type: Article
2000 Volume 27 Issue 1 Pages
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Reflection high-energy electron diffraction (RHEED) oscillation measurements on a GaAs(100) surface at near Ga stabilized surface were used to study the desorption of Ga on GaAs substrates. Dependence of the growth rates on the As pressure, as measured by RHEED oscillations from the (100) surface were observed. The increase of Ga desorption from the surface at higher As pressures probably arose from an increasing coverage with the QLL(qpasi liquid layer) of As.
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M. Inada, T. Yamamoto, K Asai, J. T. Nelson, T. Ohachi
Article type: Article
2000 Volume 27 Issue 1 Pages
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The height of triangular-pyramidal growth hillocks on GaAs(111)A surfaces grown by MBE were found to depend on the As flux at a constant Ga flux.
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K. Kohno, A. Miyagawa, J. T. Nelson, T. Ohachi
Article type: Article
2000 Volume 27 Issue 1 Pages
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The oxidation of AlAs was found to depend on its layer thickness. Our experiments showed that if the AlAS layer thickness was more than 100 nm, the oxidation followed a I -dimensional model, but if the thickness was from 10 to 100 nm, the characteristics didn't follow the model. The composition of Al_xGa_<1-x> As also affected the oxidation: a larger had faster oxide growth. If x exceeded 0.75, the oxide grew rapidly, but when x was between 0.45 and 0.75, there was little growth of the oxide.
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T. Asaoka, Y. Ueda, M. Tabuchi, Y. Takeda, T. Tsuchiya, H. Sakaguchi
Article type: Article
2000 Volume 27 Issue 1 Pages
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InGaP/GaAs heterostructures grown by MOVPE were analyzed by X-ray CTR scattering measurement. Distributions of As and P at the interfaces were investigated with different growth temperatures and different atmospheres (i.e., H_2 AsH_3, and PH_3) during growth interruption. It was shown that the abruptness of the interfaces strongly depends on the growth condition.
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Masao TABUCHI, Munetaka ARAKI, Ryuzo TAKAHASHI, Yoshikazu TAKEDA
Article type: Article
2000 Volume 27 Issue 1 Pages
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Hetero-interfaces of InP/InGaAs/InP grown by OMVPE(organometallic vapor phase epitaxy) and GaAs/ InAs/GaAs grown by MBE(molecular beam epitaxy) were investigated by X-ray CTR(crystal truncation rod) measurement. The results of the X-ray CTR measurement showed that the distribution of the group-V atoms can be controlled by the change of the growth sequence. However, the group-III atoms still distributed wider and peak compositions of Ga were smaller than' those designed for all the samples. It suggests that more efforts are necessary to control the distribution of group-III atoms after we solved the problem of group-V atoms distributions.
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Ayako Kato, Yuko Inatomi, Kazuhiko Kuribayashi, Makoto Sugamata
Article type: Article
2000 Volume 27 Issue 1 Pages
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In this research, the morphological changes during GaP LPE growth of the S/L interface were observed under strong static magnetic field using near-infrared microscopic interferometer. We discussed the damping effect of convection on the surface morphology during dissolution and growth.
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K. Balakrishnan, S. Iida, M. Kumagawa, Y. Hayakawa
Article type: Article
2000 Volume 27 Issue 1 Pages
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In_xGa_<1-x>As (x=0.06) epitaxial lateral overgrown (ELO) layers were grown on (111)B GaAs patterned substrates covered with SiN_x mask by LPE. When the layers with {111}A and {111}B growth coalesced, dislocations got generated. For the coalesced ELO layers in constant touch with the basal SiN_x mask, the surface became concave due to thickness decrease of the layers. This problem of thickness decrease was not present when a big enough void structure was present in the grown InGaAS ELO layers.
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K. Balakrishnan, S. Iida, M. Kumagawa, Y. Hayakawa
Article type: Article
2000 Volume 27 Issue 1 Pages
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Growth of In_xGa_<1-x>As (x=0.06) layers with pyramid like structures on various types of patterned (100) GaAs substrates by liquid phase epitaxy (LPE) has been investigated.
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K. Hayasida, M. Nishio, H. Harada, Qixin GUO, H. Ogawa
Article type: Article
2000 Volume 27 Issue 1 Pages
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Published: July 01, 2000
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Effects of substrate temperature upon the growth rate and photoluminescence properties of ZnTe epi-layers are compared between photo-assisted MOVPE and MOVPE when low growth rates were used Photoassisted MOVPE leads to ZnTe epi-layers of high quality over the wide range of substrate temperature compaled to MOVPE.
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Y. Yoshioka, K. Shimizu, M. Harada, K. Takagaki, M. Kasuga
Article type: Article
2000 Volume 27 Issue 1 Pages
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Surface of homoepitaxial CdTe layers was observed by atomic force microscope.to examine the step structure. There exist two kinds of characteristic facet, (111) and (100), whose shape and width vary with substrate plane orientation and the supersaturation of the source material. The larger the area of (111) facet, the more likely twins are formed
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